A Quantum Fluctuation Operator for Deep N-Well MOSFET Flicker Noise Modeling

In this work, a quantum fluctuation operator (QFO) has been formulated to achieve realistic flicker noise simulations which are currently not available on BSIM platforms. The responsibility of the operator is to create a closer representation of flicker noise in deep n-well (DNW) MOSFETs based on probabilistic densities. It is well known that flicker (or 1/f ) noise is generated by a combination of number and mobility fluctuations. The application of Heisenberg’s Uncertainty Principle (HUP) can determine the transitional probabilities that influence the extent of these fluctuations. These are the elementary issues that are not readily addressed in the Berkeley model. QFO modeling approximates conductivity fluctuation along the n-channel by normalizing the k-space time-dependent energies of electrons in a finite double-well representing the DNW and the p-type material. A quantum fluctuation index has been derived to represent fluctuations in mobility and carrier concentration across the np junction between the DNW and p-type semiconductor. A quantum fluctuation average has also been formulated to predict the amount of fluctuation along the n-channel.